Controlled High-Temperature Sintering of Boron Carbide

Sintering of cubic boron nitride under high pressures and temperatures in the presence of boron carbide as the binding material

Sintering of cubic boron nitride (cBN) was carried out by subjecting fine powders of cBN to high pressures and temperatures (P = 50-60 kb, T = 1200-1500°C ) in the presence of boron carbide as the main binding material together with a small amount of aluminium nitride. The composites were characterized by X-ray diffraction, scanning electron microscopy, FTIR, Raman Spectroscopy and microhardnes...

Boron carbide/n-silicon carbide heterojunction diodes

Sintering boron carbide ceramics without grain growth by plastic deformation as the dominant densification mechanism

A new ceramic sintering approach employing plastic deformation as the dominant mechanism is proposed, at low temperature close to the onset point of grain growth and under high pressure. Based on this route, fully dense boron carbide without grain growth can be prepared at 1,675-1,700 °C and under pressure of (≥) 80 MPa in 5 minutes. The dense boron carbide shows excellent mechanical properties...

Effect of Silicon Carbide and graphite additives on the pressureless Sintering mechanism and microstructural characteristics of Ultra-High Temperature ZrB2 Ceramics Composites

The effect of SiC content, additives, and process parameters on densification and microstructural properties of pressureless sintered ZrB2– (1–10 wt %) SiC particulate composites have been studied. The ZrB2–SiC composite powders mixed by Spex mixer with 1-2wt% C (added as graphite powder) and CMC have been cold-compacted and sintered in argon environment in the temperature range of 1800–2100ºC ...

Shock-wave strength properties of boron carbide and silicon carbide